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FQB8N60CF 600V N-Channel MOSFET
December 2005
FRFET
FQB8N60CF
600V N-Channel MOSFET
Features
* 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V * Low gate charge ( typical 28nC) * Low Crss ( typical 12pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
D D
G G S
D2-PAK
FQB Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
Parameter
FQB8N60CF
600 6.26 3.96 25 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
160 6.26 14.7 4.5 147 1.18 -55 to +150 300
Thermal Characteristics
Symbol
RJC RJA RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient
FQB8N60CF
0.85 40 62.5
Units
C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2005 Fairchild Semiconductor Corporation
1
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FQB8N60CF Rev. A
FQB8N60CF 600V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQB8N60CF
Device
FQB8N60CFTM
Package
D2-PAK
TC = 25C unless otherwise noted
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.13A VDS = 40 V, ID = 3.13 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
600 -----2.0 ------
Typ
-0.7 -----1.25 8.7 965 105 12 16.5 60.5 81 64.5 28 4.5 12 ---82 242
Max Units
--10 100 100 -100 4.0 1.5 -1255 135 16 45 130 170 140 36 --6.26 25 1.4 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 300 V, ID = 6.26A, RG = 25 ---(Note 4, 5)
---------
VDS = 480 V, ID = 6.26A, VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6.26 A VGS = 0 V, IS = 6.26 A, dIF / dt = 100 A/s
(Note 4)
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.3mH, IAS = 6.26A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6.26A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQB8N60CF Rev. A
2
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FQB8N60CF 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
Figure 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
150 C
o
10
0
25 C
10
0
o
-55 C
o
10
-1
Notes : 1. 250s Pulse Test 2. TC = 25
-1
Notes : 1. VDS = 40V 2. 250s Pulse Test
10
-1
10
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
3.5
RDS(ON) [ ], Drain-Source On-Resistance
2.5
VGS = 10V
2.0
IDR, Reverse Drain Current [A]
3.0
10
1
10
0
1.5
VGS = 20V
1.0
Note : TJ = 25
150
-1
25
Notes : 1. VGS = 0V 2. 250s Pulse Test
0.5
0
5
10
15
20
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
2000 1800 1600 1400
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
10
VGS, Gate-Source Voltage [V]
VDS = 120V VDS = 300V VDS = 480V
Capacitance [pF]
Ciss
8
1200 1000 800 600 400 200
Notes ; 1. VGS = 0 V 2. f = 1 MHz
Coss
6
4
Crss
2
* Note : ID = 6.26A
0
0 -1 10
0
5
10
15
20
25
30
10
0
10
1
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQB8N60CF Rev. A
3
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FQB8N60CF 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
3.0
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
0.9
1.0
* Notes : 1. VGS = 10 V 2. ID = 3.13 A
* Notes : 1. VGS = 0 V 2. ID = 250
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
2
Figure 10. Maximum Drain Current vs. Case Temperature
8
10
Operation in This Area is Limited by R DS(on)
10 s 100 s
10
1
ID, Drain Current[A]
10
0
10ms DC 100ms
ID, Drain Current [A]
1ms
6
4
10
-1
2
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
3
0 25
50
75
100
125
150
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [ ]
Figure 11. Transient Thermal Response Curve
10
0
D = 0 .5
Z JC(t), Thermal Response
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
N o te s : 1 . Z J C (t) = 0 .8 5 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
10
-2
s in g le p u ls e
PDM t1
10
-3
t2
10
0
10
-5
10
-4
10
-2
10
-1
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQB8N60CF Rev. A
4
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FQB8N60CF 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB8N60CF Rev. A
5
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FQB8N60CF 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB8N60CF Rev. A
6
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FQB8N60CF 600V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
(0.40) 9.90 0.20 4.50 0.20 1.30 -0.05
+0.10
1.20 0.20
9.20 0.20
15.30 0.30
1.40 0.20
2.00 0.10
0.10 0.15 2.54 0.30 9.20 0.20
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4.90 0.20
2.40 0.20
(0.75)
1.27 0.10 2.54 TYP
0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40)
~ 0
3
+0.10
0.50 -0.05
10.00 0.20 15.30 0.30
(1.75)
(2XR0.45)
0.80 0.10
Dimensions in Millimeters
FQB8N60CF Rev. A
7
4.90 0.20
(7.20)
FQB8N60CF 600V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I17
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
8 FQB8N60CF Rev. A
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